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Please use this identifier to cite or link to this item: https://doi.org/10.1109/RFIT.2012.6401630
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dc.titleHigh temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C
dc.contributor.authorPathrose, J.
dc.contributor.authorGong, X.
dc.contributor.authorZou, L.
dc.contributor.authorKoh, J.
dc.contributor.authorChai, K.T.C.
dc.contributor.authorJe, M.
dc.contributor.authorXu, Y.P.
dc.date.accessioned2014-10-07T04:45:16Z
dc.date.available2014-10-07T04:45:16Z
dc.date.issued2012
dc.identifier.citationPathrose, J.,Gong, X.,Zou, L.,Koh, J.,Chai, K.T.C.,Je, M.,Xu, Y.P. (2012). High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C. Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 : 110-112. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/RFIT.2012.6401630" target="_blank">https://doi.org/10.1109/RFIT.2012.6401630</a>
dc.identifier.isbn9781467323048
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83794
dc.description.abstractThis paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/RFIT.2012.6401630
dc.sourceScopus
dc.subjectBandgap Reference
dc.subjectHigh Temperature
dc.subjectOp-amp Offset
dc.subjectSOI
dc.subjectTemperature Compensation
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/RFIT.2012.6401630
dc.description.sourcetitleProceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
dc.description.page110-112
dc.identifier.isiutNOT_IN_WOS
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