Please use this identifier to cite or link to this item: https://doi.org/10.1109/RFIT.2012.6401630
Title: High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C
Authors: Pathrose, J.
Gong, X.
Zou, L.
Koh, J.
Chai, K.T.C.
Je, M.
Xu, Y.P. 
Keywords: Bandgap Reference
High Temperature
Op-amp Offset
SOI
Temperature Compensation
Issue Date: 2012
Citation: Pathrose, J.,Gong, X.,Zou, L.,Koh, J.,Chai, K.T.C.,Je, M.,Xu, Y.P. (2012). High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C. Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 : 110-112. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIT.2012.6401630
Abstract: This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples. © 2012 IEEE.
Source Title: Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/83794
ISBN: 9781467323048
DOI: 10.1109/RFIT.2012.6401630
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