Please use this identifier to cite or link to this item:
|Title:||High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C||Authors:||Pathrose, J.
|Issue Date:||2012||Citation:||Pathrose, J.,Gong, X.,Zou, L.,Koh, J.,Chai, K.T.C.,Je, M.,Xu, Y.P. (2012). High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C. Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 : 110-112. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIT.2012.6401630||Abstract:||This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples. © 2012 IEEE.||Source Title:||Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012||URI:||http://scholarbank.nus.edu.sg/handle/10635/83794||ISBN:||9781467323048||DOI:||10.1109/RFIT.2012.6401630|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 7, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.