Please use this identifier to cite or link to this item:
|Title:||An adapted tunneling model for MgO-based magnetic tunneling junctions||Authors:||Chen, B.J.
|Keywords:||magnetic tunneling junctions
|Issue Date:||2012||Citation:||Chen, B.J.,Tan, S.G.,Cai, K. (2012). An adapted tunneling model for MgO-based magnetic tunneling junctions. 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012 : 7-11. ScholarBank@NUS Repository. https://doi.org/10.1109/NVMTS.2013.6632850||Abstract:||We present a model for calculating the tunneling conductance and thus the tunneling magnetoresistance for MgO-based magnetic tunneling junctions. Both effects from the interface scattering and the barrier imperfection are considered in the model by introducing additional parameters. The temperature dependence of resistance is included by using a phenomenological model. This model successfully interprets the experimental results in the published literatures. © 2012 IEEE.||Source Title:||2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012||URI:||http://scholarbank.nus.edu.sg/handle/10635/83457||ISBN:||9781467328487||DOI:||10.1109/NVMTS.2013.6632850|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.