Please use this identifier to cite or link to this item: https://doi.org/10.1109/NVMTS.2013.6632850
Title: An adapted tunneling model for MgO-based magnetic tunneling junctions
Authors: Chen, B.J.
Tan, S.G. 
Cai, K.
Keywords: magnetic tunneling junctions
MgO barrier
tunneling model
Issue Date: 2012
Source: Chen, B.J.,Tan, S.G.,Cai, K. (2012). An adapted tunneling model for MgO-based magnetic tunneling junctions. 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012 : 7-11. ScholarBank@NUS Repository. https://doi.org/10.1109/NVMTS.2013.6632850
Abstract: We present a model for calculating the tunneling conductance and thus the tunneling magnetoresistance for MgO-based magnetic tunneling junctions. Both effects from the interface scattering and the barrier imperfection are considered in the model by introducing additional parameters. The temperature dependence of resistance is included by using a phenomenological model. This model successfully interprets the experimental results in the published literatures. © 2012 IEEE.
Source Title: 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/83457
ISBN: 9781467328487
DOI: 10.1109/NVMTS.2013.6632850
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