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Please use this identifier to cite or link to this item: https://doi.org/10.1109/NVMTS.2013.6632850
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dc.titleAn adapted tunneling model for MgO-based magnetic tunneling junctions
dc.contributor.authorChen, B.J.
dc.contributor.authorTan, S.G.
dc.contributor.authorCai, K.
dc.date.accessioned2014-10-07T04:41:27Z
dc.date.available2014-10-07T04:41:27Z
dc.date.issued2012
dc.identifier.citationChen, B.J.,Tan, S.G.,Cai, K. (2012). An adapted tunneling model for MgO-based magnetic tunneling junctions. 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012 : 7-11. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/NVMTS.2013.6632850" target="_blank">https://doi.org/10.1109/NVMTS.2013.6632850</a>
dc.identifier.isbn9781467328487
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83457
dc.description.abstractWe present a model for calculating the tunneling conductance and thus the tunneling magnetoresistance for MgO-based magnetic tunneling junctions. Both effects from the interface scattering and the barrier imperfection are considered in the model by introducing additional parameters. The temperature dependence of resistance is included by using a phenomenological model. This model successfully interprets the experimental results in the published literatures. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/NVMTS.2013.6632850
dc.sourceScopus
dc.subjectmagnetic tunneling junctions
dc.subjectMgO barrier
dc.subjecttunneling model
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/NVMTS.2013.6632850
dc.description.sourcetitle2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012
dc.description.page7-11
dc.identifier.isiutNOT_IN_WOS
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