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|Title:||A new liner stressor (GeTe) featuring stress enhancement due to very large phase-change induced volume contraction for p-channel FinFETs||Authors:||Cheng, R.
|Issue Date:||2012||Citation:||Cheng, R.,Ding, Y.,Koh, S.-M.,Gyanathan, A.,Bai, F.,Liu, B.,Yeo, Y.-C. (2012). A new liner stressor (GeTe) featuring stress enhancement due to very large phase-change induced volume contraction for p-channel FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : 93-94. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2012.6242477||Abstract:||We report the first demonstration of a novel GeTe liner stressor which exhibits very large volume contraction during phase-change, and its integration in p-channel FinFETs for strain engineering. Conformally grown GeTe liner with different thicknesses was formed on FinFETs with ultra-scaled gate length L G down to ∼3 nm. When GeTe changes phase from amorphous (α-GeTe) to crystalline state (c-GeTe), GeTe liner contracts and compresses the Si source/drain region in the fin, leading to very high channel stress. Significant drive current I Dsat enhancement of 69% and 106% were observed for FinFETs with 30 nm and 50 nm c-GeTe liner stressor over the control devices, respectively. © 2012 IEEE.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83383||ISBN:||9781467308458||ISSN:||07431562||DOI:||10.1109/VLSIT.2012.6242477|
|Appears in Collections:||Staff Publications|
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