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Title: Weak localization and antilocalization of hole carriers in degenerate p-Ge 1-xMn xTe
Authors: Lim, S.T. 
Hui, L.
Bi, J.F. 
Teo, K.L. 
Issue Date: 1-Dec-2011
Citation: Lim, S.T., Hui, L., Bi, J.F., Teo, K.L. (2011-12-01). Weak localization and antilocalization of hole carriers in degenerate p-Ge 1-xMn xTe. Journal of Applied Physics 110 (11) : -. ScholarBank@NUS Repository.
Abstract: We have performed magnetotransport studies on p-type Ge 0.7Mn 0.3Te under hydrostatic pressure. The magnetoresistance (MR) is characterized by both positive and negative contributions, which can be described by the antilocalization and weak localization models, respectively. We report the temperature and pressure dependence of the spin-orbit, elastic and inelastic scattering times, as well as the coherence length in Ge 0.7Mn 0.3Te. The spin-orbit scattering time is found to be independent of pressure and temperature and it dominates over the inelastic scattering time leading to the observed positive MR. The phase coherent length is correlated to the inelastic scattering which is predominately due to electron-electron scattering. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.3669492
Appears in Collections:Staff Publications

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