Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3669492
Title: Weak localization and antilocalization of hole carriers in degenerate p-Ge 1-xMn xTe
Authors: Lim, S.T. 
Hui, L.
Bi, J.F. 
Teo, K.L. 
Issue Date: 1-Dec-2011
Citation: Lim, S.T., Hui, L., Bi, J.F., Teo, K.L. (2011-12-01). Weak localization and antilocalization of hole carriers in degenerate p-Ge 1-xMn xTe. Journal of Applied Physics 110 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3669492
Abstract: We have performed magnetotransport studies on p-type Ge 0.7Mn 0.3Te under hydrostatic pressure. The magnetoresistance (MR) is characterized by both positive and negative contributions, which can be described by the antilocalization and weak localization models, respectively. We report the temperature and pressure dependence of the spin-orbit, elastic and inelastic scattering times, as well as the coherence length in Ge 0.7Mn 0.3Te. The spin-orbit scattering time is found to be independent of pressure and temperature and it dominates over the inelastic scattering time leading to the observed positive MR. The phase coherent length is correlated to the inelastic scattering which is predominately due to electron-electron scattering. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/83263
ISSN: 00218979
DOI: 10.1063/1.3669492
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

3
checked on Oct 15, 2018

WEB OF SCIENCETM
Citations

3
checked on Oct 15, 2018

Page view(s)

43
checked on Jun 29, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.