Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3669492
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dc.titleWeak localization and antilocalization of hole carriers in degenerate p-Ge 1-xMn xTe
dc.contributor.authorLim, S.T.
dc.contributor.authorHui, L.
dc.contributor.authorBi, J.F.
dc.contributor.authorTeo, K.L.
dc.date.accessioned2014-10-07T04:39:13Z
dc.date.available2014-10-07T04:39:13Z
dc.date.issued2011-12-01
dc.identifier.citationLim, S.T., Hui, L., Bi, J.F., Teo, K.L. (2011-12-01). Weak localization and antilocalization of hole carriers in degenerate p-Ge 1-xMn xTe. Journal of Applied Physics 110 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3669492
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83263
dc.description.abstractWe have performed magnetotransport studies on p-type Ge 0.7Mn 0.3Te under hydrostatic pressure. The magnetoresistance (MR) is characterized by both positive and negative contributions, which can be described by the antilocalization and weak localization models, respectively. We report the temperature and pressure dependence of the spin-orbit, elastic and inelastic scattering times, as well as the coherence length in Ge 0.7Mn 0.3Te. The spin-orbit scattering time is found to be independent of pressure and temperature and it dominates over the inelastic scattering time leading to the observed positive MR. The phase coherent length is correlated to the inelastic scattering which is predominately due to electron-electron scattering. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3669492
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3669492
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume110
dc.description.issue11
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000298254800090
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