Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory

Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2007.908863

Title:	Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
Authors:	Zhang, G. Samanta, S.K. Singh, P.K. Ma, F.-J. Yoo, M.-T. Roh, Y. Yoo, W.J.
Keywords:	Crystallization Flash memories Flash memory HfO2 Partial crystallization Two-bit/four-level properties
Issue Date:	Dec-2007
Citation:	Zhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J. (2007-12). Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory. IEEE Transactions on Electron Devices 54 (12) : 3177-3185. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908863
Abstract:	The nonvolatile memory properties of the partially crystallized HfO2 charge storage layer are investigated using short-channel devices of gate length Lg down to 80 nm. Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming and hot hole injection erasing for devices of Lg > 170 nm although the reduction of the memory window is observed for devices ofLg
Source Title:	IEEE Transactions on Electron Devices
URI:	http://scholarbank.nus.edu.sg/handle/10635/82864
ISSN:	00189383
DOI:	10.1109/TED.2007.908863
Appears in Collections:	Staff Publications

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