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|Title:||Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory||Authors:||Zhang, G.
|Issue Date:||Dec-2007||Citation:||Zhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J. (2007-12). Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory. IEEE Transactions on Electron Devices 54 (12) : 3177-3185. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908863||Abstract:||The nonvolatile memory properties of the partially crystallized HfO2 charge storage layer are investigated using short-channel devices of gate length Lg down to 80 nm. Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming and hot hole injection erasing for devices of Lg > 170 nm although the reduction of the memory window is observed for devices ofLg||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82864||ISSN:||00189383||DOI:||10.1109/TED.2007.908863|
|Appears in Collections:||Staff Publications|
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