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https://doi.org/10.1109/TED.2007.908863
| Title: | Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory | Authors: | Zhang, G. Samanta, S.K. Singh, P.K. Ma, F.-J. Yoo, M.-T. Roh, Y. Yoo, W.J. |
Keywords: | Crystallization Flash memories Flash memory HfO2 Partial crystallization Two-bit/four-level properties |
Issue Date: | Dec-2007 | Citation: | Zhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J. (2007-12). Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory. IEEE Transactions on Electron Devices 54 (12) : 3177-3185. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908863 | Abstract: | The nonvolatile memory properties of the partially crystallized HfO2 charge storage layer are investigated using short-channel devices of gate length Lg down to 80 nm. Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming and hot hole injection erasing for devices of Lg > 170 nm although the reduction of the memory window is observed for devices ofLg | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/82864 | ISSN: | 00189383 | DOI: | 10.1109/TED.2007.908863 |
| Appears in Collections: | Staff Publications |
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