Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2007.908863
Title: Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
Authors: Zhang, G.
Samanta, S.K. 
Singh, P.K.
Ma, F.-J.
Yoo, M.-T.
Roh, Y.
Yoo, W.J.
Keywords: Crystallization
Flash memories
Flash memory
HfO2
Partial crystallization
Two-bit/four-level properties
Issue Date: Dec-2007
Citation: Zhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J. (2007-12). Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory. IEEE Transactions on Electron Devices 54 (12) : 3177-3185. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908863
Abstract: The nonvolatile memory properties of the partially crystallized HfO2 charge storage layer are investigated using short-channel devices of gate length Lg down to 80 nm. Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming and hot hole injection erasing for devices of Lg > 170 nm although the reduction of the memory window is observed for devices ofLg
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82864
ISSN: 00189383
DOI: 10.1109/TED.2007.908863
Appears in Collections:Staff Publications

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