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Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2007.908863
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dc.titlePartial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
dc.contributor.authorZhang, G.
dc.contributor.authorSamanta, S.K.
dc.contributor.authorSingh, P.K.
dc.contributor.authorMa, F.-J.
dc.contributor.authorYoo, M.-T.
dc.contributor.authorRoh, Y.
dc.contributor.authorYoo, W.J.
dc.date.accessioned2014-10-07T04:34:24Z
dc.date.available2014-10-07T04:34:24Z
dc.date.issued2007-12
dc.identifier.citationZhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J. (2007-12). Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory. IEEE Transactions on Electron Devices 54 (12) : 3177-3185. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908863
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82864
dc.description.abstractThe nonvolatile memory properties of the partially crystallized HfO2 charge storage layer are investigated using short-channel devices of gate length Lg down to 80 nm. Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming and hot hole injection erasing for devices of Lg > 170 nm although the reduction of the memory window is observed for devices ofLg
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2007.908863
dc.sourceScopus
dc.subjectCrystallization
dc.subjectFlash memories
dc.subjectFlash memory
dc.subjectHfO2
dc.subjectPartial crystallization
dc.subjectTwo-bit/four-level properties
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2007.908863
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume54
dc.description.issue12
dc.description.page3177-3185
dc.description.codenIETDA
dc.identifier.isiut000251268300006
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