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Title: Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation
Authors: Lee, P.S.
Mangelinck, D.
Pey, K.L. 
Ding, J. 
Chi, D.Z.
Dai, J.Y.
See, A. 
Keywords: Agglomeration
Layer inversion
N2 + Implant
Phase stability
Issue Date: Dec-2001
Citation: Lee, P.S.,Mangelinck, D.,Pey, K.L.,Ding, J.,Chi, D.Z.,Dai, J.Y.,See, A. (2001-12). Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation. Journal of Electronic Materials 30 (12) : 1554-1559. ScholarBank@NUS Repository.
Abstract: The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.
Source Title: Journal of Electronic Materials
ISSN: 03615235
Appears in Collections:Staff Publications

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