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| Title: | Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation | Authors: | Lee, P.S. Mangelinck, D. Pey, K.L. Ding, J. Chi, D.Z. Dai, J.Y. See, A. |
Keywords: | Agglomeration Layer inversion N2 + Implant NiSi Phase stability |
Issue Date: | Dec-2001 | Citation: | Lee, P.S.,Mangelinck, D.,Pey, K.L.,Ding, J.,Chi, D.Z.,Dai, J.Y.,See, A. (2001-12). Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation. Journal of Electronic Materials 30 (12) : 1554-1559. ScholarBank@NUS Repository. | Abstract: | The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si. | Source Title: | Journal of Electronic Materials | URI: | http://scholarbank.nus.edu.sg/handle/10635/82761 | ISSN: | 03615235 |
| Appears in Collections: | Staff Publications |
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