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|Title:||Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation||Authors:||Lee, P.S.
N2 + Implant
|Issue Date:||Dec-2001||Citation:||Lee, P.S.,Mangelinck, D.,Pey, K.L.,Ding, J.,Chi, D.Z.,Dai, J.Y.,See, A. (2001-12). Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation. Journal of Electronic Materials 30 (12) : 1554-1559. ScholarBank@NUS Repository.||Abstract:||The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.||Source Title:||Journal of Electronic Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/82761||ISSN:||03615235|
|Appears in Collections:||Staff Publications|
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