Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2007.08.010

Title:	Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films
Authors:	Sim, C.H. Ko, V. Teo, K.L. Guo, Z.B. Liew, T. Chong, T.C.
Keywords:	A1. Reflection high-energy electron diffraction A3. Molecular beam epitaxy B1. Heusler alloy B3. Spintronics
Issue Date:	15-Oct-2007
Citation:	Sim, C.H., Ko, V., Teo, K.L., Guo, Z.B., Liew, T., Chong, T.C. (2007-10-15). Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films. Journal of Crystal Growth 308 (2) : 392-397. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2007.08.010
Abstract:	We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals. © 2007 Elsevier B.V. All rights reserved.
Source Title:	Journal of Crystal Growth
URI:	http://scholarbank.nus.edu.sg/handle/10635/82719
ISSN:	00220248
DOI:	10.1016/j.jcrysgro.2007.08.010
Appears in Collections:	Staff Publications

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