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|Title:||Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films||Authors:||Sim, C.H.
|Keywords:||A1. Reflection high-energy electron diffraction
A3. Molecular beam epitaxy
B1. Heusler alloy
|Issue Date:||15-Oct-2007||Citation:||Sim, C.H., Ko, V., Teo, K.L., Guo, Z.B., Liew, T., Chong, T.C. (2007-10-15). Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films. Journal of Crystal Growth 308 (2) : 392-397. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2007.08.010||Abstract:||We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals. © 2007 Elsevier B.V. All rights reserved.||Source Title:||Journal of Crystal Growth||URI:||http://scholarbank.nus.edu.sg/handle/10635/82719||ISSN:||00220248||DOI:||10.1016/j.jcrysgro.2007.08.010|
|Appears in Collections:||Staff Publications|
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