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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2007.08.010
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dc.titleMolecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films
dc.contributor.authorSim, C.H.
dc.contributor.authorKo, V.
dc.contributor.authorTeo, K.L.
dc.contributor.authorGuo, Z.B.
dc.contributor.authorLiew, T.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:32:42Z
dc.date.available2014-10-07T04:32:42Z
dc.date.issued2007-10-15
dc.identifier.citationSim, C.H., Ko, V., Teo, K.L., Guo, Z.B., Liew, T., Chong, T.C. (2007-10-15). Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films. Journal of Crystal Growth 308 (2) : 392-397. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2007.08.010
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82719
dc.description.abstractWe report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals. © 2007 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2007.08.010
dc.sourceScopus
dc.subjectA1. Reflection high-energy electron diffraction
dc.subjectA3. Molecular beam epitaxy
dc.subjectB1. Heusler alloy
dc.subjectB3. Spintronics
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jcrysgro.2007.08.010
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume308
dc.description.issue2
dc.description.page392-397
dc.description.codenJCRGA
dc.identifier.isiut000250991000026
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