Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2007.08.010
Title: Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films
Authors: Sim, C.H.
Ko, V.
Teo, K.L. 
Guo, Z.B.
Liew, T. 
Chong, T.C. 
Keywords: A1. Reflection high-energy electron diffraction
A3. Molecular beam epitaxy
B1. Heusler alloy
B3. Spintronics
Issue Date: 15-Oct-2007
Source: Sim, C.H., Ko, V., Teo, K.L., Guo, Z.B., Liew, T., Chong, T.C. (2007-10-15). Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films. Journal of Crystal Growth 308 (2) : 392-397. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2007.08.010
Abstract: We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals. © 2007 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/82719
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2007.08.010
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