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|Title:||Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells||Authors:||Kumar, A.
|Issue Date:||2013||Citation:||Kumar, A., Hidayat, H., Ke, C., Chakraborty, S., Dalapati, G.K., Widenborg, P.I., Tan, C.C., Dolmanan, S., Aberle, A.G. (2013). Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells. Journal of Applied Physics 114 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4823811||Abstract:||The effect of the phosphine (PH3) flow rate on the doping profile, in particular the peak doping concentration of the n+ emitter layer, of solid phase crystallised polycrystalline silicon thin-film solar cells on glass is investigated by electrochemical capacitance-voltage profiling. The peak n+ layer doping is found to increase with increasing PH3 gas flow, resulting in a shift of the p-n junction location towards the centre of the diode. The impact of the PH3 flow rate on the crystal quality of the poly-Si films is analysed using ultraviolet (UV) reflectance and UV/visible Raman spectroscopy. The impact of the PH 3 flow rate on the efficiency of poly-Si thin-film solar cells is investigated using electrical measurements. An improvement in the efficiency by 46% and a pseudo energy conversion efficiency of 5% was obtained through precise control of the flow rate at an intermediate n+ emitter layer doping concentration of 1.0 × 1019 cm-3. The best fabricated poly-Si thin-film solar cell is also found to have the highest crystal quality factor, based on both Raman and UV reflectance measurements. © 2013 AIP Publishing LLC.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82499||ISSN:||00218979||DOI:||10.1063/1.4823811|
|Appears in Collections:||Staff Publications|
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