Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4823811
Title: Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells
Authors: Kumar, A.
Hidayat, H.
Ke, C.
Chakraborty, S.
Dalapati, G.K.
Widenborg, P.I. 
Tan, C.C.
Dolmanan, S.
Aberle, A.G. 
Issue Date: 2013
Citation: Kumar, A., Hidayat, H., Ke, C., Chakraborty, S., Dalapati, G.K., Widenborg, P.I., Tan, C.C., Dolmanan, S., Aberle, A.G. (2013). Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells. Journal of Applied Physics 114 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4823811
Abstract: The effect of the phosphine (PH3) flow rate on the doping profile, in particular the peak doping concentration of the n+ emitter layer, of solid phase crystallised polycrystalline silicon thin-film solar cells on glass is investigated by electrochemical capacitance-voltage profiling. The peak n+ layer doping is found to increase with increasing PH3 gas flow, resulting in a shift of the p-n junction location towards the centre of the diode. The impact of the PH3 flow rate on the crystal quality of the poly-Si films is analysed using ultraviolet (UV) reflectance and UV/visible Raman spectroscopy. The impact of the PH 3 flow rate on the efficiency of poly-Si thin-film solar cells is investigated using electrical measurements. An improvement in the efficiency by 46% and a pseudo energy conversion efficiency of 5% was obtained through precise control of the flow rate at an intermediate n+ emitter layer doping concentration of 1.0 × 1019 cm-3. The best fabricated poly-Si thin-film solar cell is also found to have the highest crystal quality factor, based on both Raman and UV reflectance measurements. © 2013 AIP Publishing LLC.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82499
ISSN: 00218979
DOI: 10.1063/1.4823811
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