Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.4861421
| Title: | Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy | Authors: | Tang, J. Deng, L.Y. Tay, C.B. Zhang, X.H. Chai, J.W. Qin, H. Liu, H.W. Venkatesan, T. Chua, S.J. |
Issue Date: | 2014 | Citation: | Tang, J., Deng, L.Y., Tay, C.B., Zhang, X.H., Chai, J.W., Qin, H., Liu, H.W., Venkatesan, T., Chua, S.J. (2014). Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy. Journal of Applied Physics 115 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4861421 | Abstract: | We demonstrated a novel and widely accessible method for determining the electron effective mass and scattering time of ZnO films with different carrier concentrations by combining terahertz time-domain spectroscopy with Hall measurement. The terahertz time domain spectroscopy (THz-TDS) transmission spectra (0.1-2THz) were well described by Drude model. It is found that electron effective mass varied from 0.23m0 to 0.26m0 as the electron concentration changes from 5.9 × 1017 cm-3 to 4.0 × 1019 cm-3. The carrier concentration dependent characteristic is ascribed to the non-parabolicity of conduction band. Free carrier localization mechanism explained the discrepancy in mobilities obtained from THz-TDS and Hall measurements. © 2014 AIP Publishing LLC. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/82139 | ISSN: | 00218979 | DOI: | 10.1063/1.4861421 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.