Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4861421
Title: Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy
Authors: Tang, J.
Deng, L.Y.
Tay, C.B. 
Zhang, X.H.
Chai, J.W.
Qin, H.
Liu, H.W.
Venkatesan, T. 
Chua, S.J. 
Issue Date: 2014
Citation: Tang, J., Deng, L.Y., Tay, C.B., Zhang, X.H., Chai, J.W., Qin, H., Liu, H.W., Venkatesan, T., Chua, S.J. (2014). Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy. Journal of Applied Physics 115 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4861421
Abstract: We demonstrated a novel and widely accessible method for determining the electron effective mass and scattering time of ZnO films with different carrier concentrations by combining terahertz time-domain spectroscopy with Hall measurement. The terahertz time domain spectroscopy (THz-TDS) transmission spectra (0.1-2THz) were well described by Drude model. It is found that electron effective mass varied from 0.23m0 to 0.26m0 as the electron concentration changes from 5.9 × 1017 cm-3 to 4.0 × 1019 cm-3. The carrier concentration dependent characteristic is ascribed to the non-parabolicity of conduction band. Free carrier localization mechanism explained the discrepancy in mobilities obtained from THz-TDS and Hall measurements. © 2014 AIP Publishing LLC.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82139
ISSN: 00218979
DOI: 10.1063/1.4861421
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