Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4861421
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dc.titleDetermination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy
dc.contributor.authorTang, J.
dc.contributor.authorDeng, L.Y.
dc.contributor.authorTay, C.B.
dc.contributor.authorZhang, X.H.
dc.contributor.authorChai, J.W.
dc.contributor.authorQin, H.
dc.contributor.authorLiu, H.W.
dc.contributor.authorVenkatesan, T.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:25:50Z
dc.date.available2014-10-07T04:25:50Z
dc.date.issued2014
dc.identifier.citationTang, J., Deng, L.Y., Tay, C.B., Zhang, X.H., Chai, J.W., Qin, H., Liu, H.W., Venkatesan, T., Chua, S.J. (2014). Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy. Journal of Applied Physics 115 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4861421
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82139
dc.description.abstractWe demonstrated a novel and widely accessible method for determining the electron effective mass and scattering time of ZnO films with different carrier concentrations by combining terahertz time-domain spectroscopy with Hall measurement. The terahertz time domain spectroscopy (THz-TDS) transmission spectra (0.1-2THz) were well described by Drude model. It is found that electron effective mass varied from 0.23m0 to 0.26m0 as the electron concentration changes from 5.9 × 1017 cm-3 to 4.0 × 1019 cm-3. The carrier concentration dependent characteristic is ascribed to the non-parabolicity of conduction band. Free carrier localization mechanism explained the discrepancy in mobilities obtained from THz-TDS and Hall measurements. © 2014 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4861421
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1063/1.4861421
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume115
dc.description.issue3
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000330615500011
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