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|Title:||A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications||Authors:||Wang, T.
silicon nanowire (SiNW) FET
Third-order intermodulation (IM3)
|Issue Date:||2013||Citation:||Wang, T., Lou, L., Lee, C. (2013). A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications. IEEE Electron Device Letters 34 (4) : 478-480. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2013.2244056||Abstract:||The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been analyzed. The SiNW FET shows a perfectly linear ID-V G relation and a nearly zero output conductance. The mechanism of its linear behaviors due to degenerate doping level has been also demonstrated. For RF applications, the proposed SiNW FET exhibits a much lower distortion for a whole range of load resistance, making it superior to modern short-channel MOSFET. © 1980-2012 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81879||ISSN:||07413106||DOI:||10.1109/LED.2013.2244056|
|Appears in Collections:||Staff Publications|
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