An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81375

Title:	An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells
Authors:	Zhang, Y. Li, M. Liu, W. Yen, A.C. Sheng, T.T. Zhao, S.P. Wang, J.L.F.
Issue Date:	1997
Citation:	Zhang, Y.,Li, M.,Liu, W.,Yen, A.C.,Sheng, T.T.,Zhao, S.P.,Wang, J.L.F. (1997). An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells. International Symposium on IC Technology, Systems and Applications 7 : 246-249. ScholarBank@NUS Repository.
Abstract:	Si-doped GaAs/AlAs quantum wells were investigated by ternperattire-dependent photoluminescence (PL) spectra. As the temperature rised from 4.4 K to 40 K, the PL intensity of the confined electron-acceptor (e-A0) emission increased while the electron-hole recombination declined. To explain this anomalous behaviour of e-A0 recombination, a model has been proposed that the temperature-enhanced delocalization of holes enhances the probability of holes captured by acceptors with rising temperatures at the temperature lower than 40 K. The calculation based on this model is in good agreement with experimental results.
Source Title:	International Symposium on IC Technology, Systems and Applications
URI:	http://scholarbank.nus.edu.sg/handle/10635/81375
Appears in Collections:	Staff Publications

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