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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81375
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dc.titleAn anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells
dc.contributor.authorZhang, Y.
dc.contributor.authorLi, M.
dc.contributor.authorLiu, W.
dc.contributor.authorYen, A.C.
dc.contributor.authorSheng, T.T.
dc.contributor.authorZhao, S.P.
dc.contributor.authorWang, J.L.F.
dc.date.accessioned2014-10-07T03:07:38Z
dc.date.available2014-10-07T03:07:38Z
dc.date.issued1997
dc.identifier.citationZhang, Y.,Li, M.,Liu, W.,Yen, A.C.,Sheng, T.T.,Zhao, S.P.,Wang, J.L.F. (1997). An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells. International Symposium on IC Technology, Systems and Applications 7 : 246-249. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81375
dc.description.abstractSi-doped GaAs/AlAs quantum wells were investigated by ternperattire-dependent photoluminescence (PL) spectra. As the temperature rised from 4.4 K to 40 K, the PL intensity of the confined electron-acceptor (e-A0) emission increased while the electron-hole recombination declined. To explain this anomalous behaviour of e-A0 recombination, a model has been proposed that the temperature-enhanced delocalization of holes enhances the probability of holes captured by acceptors with rising temperatures at the temperature lower than 40 K. The calculation based on this model is in good agreement with experimental results.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleInternational Symposium on IC Technology, Systems and Applications
dc.description.volume7
dc.description.page246-249
dc.identifier.isiutNOT_IN_WOS
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