Please use this identifier to cite or link to this item:
https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8
| Title: | New accurate model for drain-gate avalanche current source of GaAs MESFET | Authors: | Xiao, Q. Ooi, B.L. Ma, J. |
Issue Date: | 20-May-2000 | Citation: | Xiao, Q.,Ooi, B.L.,Ma, J. (2000-05-20). New accurate model for drain-gate avalanche current source of GaAs MESFET. Microwave and Optical Technology Letters 25 (4) : 269-271. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8 | Abstract: | A new drain-gate avalanche current source model, which is controlled by Vds and Vgs, is proposed. A Fujitsu MESFET transistor, FLC-103WG, is adopted for measurement, and the model is extracted. Compared with several conventional models, the proposed model is found to be more accurate than the Curtice and Fujii model. | Source Title: | Microwave and Optical Technology Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80788 | ISSN: | 08952477 | DOI: | 10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.