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|Title:||New accurate model for drain-gate avalanche current source of GaAs MESFET||Authors:||Xiao, Q.
|Issue Date:||20-May-2000||Citation:||Xiao, Q.,Ooi, B.L.,Ma, J. (2000-05-20). New accurate model for drain-gate avalanche current source of GaAs MESFET. Microwave and Optical Technology Letters 25 (4) : 269-271. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8||Abstract:||A new drain-gate avalanche current source model, which is controlled by Vds and Vgs, is proposed. A Fujitsu MESFET transistor, FLC-103WG, is adopted for measurement, and the model is extracted. Compared with several conventional models, the proposed model is found to be more accurate than the Curtice and Fujii model.||Source Title:||Microwave and Optical Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80788||ISSN:||08952477||DOI:||10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8|
|Appears in Collections:||Staff Publications|
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