Please use this identifier to cite or link to this item:
|Title:||New accurate model for drain-gate avalanche current source of GaAs MESFET|
|Source:||Xiao, Q.,Ooi, B.L.,Ma, J. (2000-05-20). New accurate model for drain-gate avalanche current source of GaAs MESFET. Microwave and Optical Technology Letters 25 (4) : 269-271. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8|
|Abstract:||A new drain-gate avalanche current source model, which is controlled by Vds and Vgs, is proposed. A Fujitsu MESFET transistor, FLC-103WG, is adopted for measurement, and the model is extracted. Compared with several conventional models, the proposed model is found to be more accurate than the Curtice and Fujii model.|
|Source Title:||Microwave and Optical Technology Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.