Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8
Title: New accurate model for drain-gate avalanche current source of GaAs MESFET
Authors: Xiao, Q.
Ooi, B.L. 
Ma, J.
Issue Date: 20-May-2000
Source: Xiao, Q.,Ooi, B.L.,Ma, J. (2000-05-20). New accurate model for drain-gate avalanche current source of GaAs MESFET. Microwave and Optical Technology Letters 25 (4) : 269-271. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8
Abstract: A new drain-gate avalanche current source model, which is controlled by Vds and Vgs, is proposed. A Fujitsu MESFET transistor, FLC-103WG, is adopted for measurement, and the model is extracted. Compared with several conventional models, the proposed model is found to be more accurate than the Curtice and Fujii model.
Source Title: Microwave and Optical Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80788
ISSN: 08952477
DOI: 10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8
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