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Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8
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dc.titleNew accurate model for drain-gate avalanche current source of GaAs MESFET
dc.contributor.authorXiao, Q.
dc.contributor.authorOoi, B.L.
dc.contributor.authorMa, J.
dc.date.accessioned2014-10-07T03:01:19Z
dc.date.available2014-10-07T03:01:19Z
dc.date.issued2000-05-20
dc.identifier.citationXiao, Q.,Ooi, B.L.,Ma, J. (2000-05-20). New accurate model for drain-gate avalanche current source of GaAs MESFET. Microwave and Optical Technology Letters 25 (4) : 269-271. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8" target="_blank">https://doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8</a>
dc.identifier.issn08952477
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80788
dc.description.abstractA new drain-gate avalanche current source model, which is controlled by Vds and Vgs, is proposed. A Fujitsu MESFET transistor, FLC-103WG, is adopted for measurement, and the model is extracted. Compared with several conventional models, the proposed model is found to be more accurate than the Curtice and Fujii model.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8
dc.description.sourcetitleMicrowave and Optical Technology Letters
dc.description.volume25
dc.description.issue4
dc.description.page269-271
dc.description.codenMOTLE
dc.identifier.isiutNOT_IN_WOS
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