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|Title:||Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs||Authors:||Zhang, X.H.
|Issue Date:||1998||Citation:||Zhang, X.H., Chua, S.J., Fan, W.J. (1998). Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs. Applied Physics Letters 73 (8) : 1098-1100. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122096||Abstract:||In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn 0.5P heterojunction lattice matched to (001)GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO=0.433xeV, while the inferred conduction band offset CBO at Γ minimum (band-gap difference minus the valence band offset) varies in x as CBOΓ=0.787xeV. Our results are in good agreement with the experimental data. © 1998 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80303||ISSN:||00036951||DOI:||10.1063/1.122096|
|Appears in Collections:||Staff Publications|
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