Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.122096
DC Field | Value | |
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dc.title | Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs | |
dc.contributor.author | Zhang, X.H. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Fan, W.J. | |
dc.date.accessioned | 2014-10-07T02:56:03Z | |
dc.date.available | 2014-10-07T02:56:03Z | |
dc.date.issued | 1998 | |
dc.identifier.citation | Zhang, X.H., Chua, S.J., Fan, W.J. (1998). Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs. Applied Physics Letters 73 (8) : 1098-1100. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122096 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80303 | |
dc.description.abstract | In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn 0.5P heterojunction lattice matched to (001)GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO=0.433xeV, while the inferred conduction band offset CBO at Γ minimum (band-gap difference minus the valence band offset) varies in x as CBOΓ=0.787xeV. Our results are in good agreement with the experimental data. © 1998 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.122096 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.doi | 10.1063/1.122096 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 73 | |
dc.description.issue | 8 | |
dc.description.page | 1098-1100 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000075572000028 | |
Appears in Collections: | Staff Publications |
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