Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122096
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dc.titleBand offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
dc.contributor.authorZhang, X.H.
dc.contributor.authorChua, S.J.
dc.contributor.authorFan, W.J.
dc.date.accessioned2014-10-07T02:56:03Z
dc.date.available2014-10-07T02:56:03Z
dc.date.issued1998
dc.identifier.citationZhang, X.H., Chua, S.J., Fan, W.J. (1998). Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs. Applied Physics Letters 73 (8) : 1098-1100. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122096
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80303
dc.description.abstractIn this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn 0.5P heterojunction lattice matched to (001)GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO=0.433xeV, while the inferred conduction band offset CBO at Γ minimum (band-gap difference minus the valence band offset) varies in x as CBOΓ=0.787xeV. Our results are in good agreement with the experimental data. © 1998 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.122096
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1063/1.122096
dc.description.sourcetitleApplied Physics Letters
dc.description.volume73
dc.description.issue8
dc.description.page1098-1100
dc.description.codenAPPLA
dc.identifier.isiut000075572000028
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