Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122096
Title: Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
Authors: Zhang, X.H. 
Chua, S.J. 
Fan, W.J.
Issue Date: 1998
Source: Zhang, X.H., Chua, S.J., Fan, W.J. (1998). Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs. Applied Physics Letters 73 (8) : 1098-1100. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122096
Abstract: In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn 0.5P heterojunction lattice matched to (001)GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO=0.433xeV, while the inferred conduction band offset CBO at Γ minimum (band-gap difference minus the valence band offset) varies in x as CBOΓ=0.787xeV. Our results are in good agreement with the experimental data. © 1998 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80303
ISSN: 00036951
DOI: 10.1063/1.122096
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