Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.microrel.2005.06.009

Title:	Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging
Authors:	Pan, M.Y. Gupta, M. Tay, A.A.O. Vaidyanathan, K.
Issue Date:	May-2006
Citation:	Pan, M.Y., Gupta, M., Tay, A.A.O., Vaidyanathan, K. (2006-05). Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging. Microelectronics Reliability 46 (5-6) : 763-767. ScholarBank@NUS Repository. https://doi.org/10.1016/j.microrel.2005.06.009
Abstract:	In the present study, an attempt is made to synthesize bulk nanostructured copper by optimization of compaction pressure followed by low temperature sintering (200 °C). The selection of compaction and sintering parameters was made keeping in consideration the capability of silicon wafer and temperatures encountered during electronic packaging, respectively. The results revealed that grain size and porosity reduces while microhardness increases with an increase in compaction pressure. The microhardness obtained at limiting 1 GPa pressure was found to be superior when compared to the published values in open literature. © 2005 Elsevier Ltd. All rights reserved.
Source Title:	Microelectronics Reliability
URI:	http://scholarbank.nus.edu.sg/handle/10635/73348
ISSN:	00262714
DOI:	10.1016/j.microrel.2005.06.009
Appears in Collections:	Staff Publications

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