Please use this identifier to cite or link to this item:
|Title:||Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging|
|Citation:||Pan, M.Y., Gupta, M., Tay, A.A.O., Vaidyanathan, K. (2006-05). Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging. Microelectronics Reliability 46 (5-6) : 763-767. ScholarBank@NUS Repository. https://doi.org/10.1016/j.microrel.2005.06.009|
|Abstract:||In the present study, an attempt is made to synthesize bulk nanostructured copper by optimization of compaction pressure followed by low temperature sintering (200 °C). The selection of compaction and sintering parameters was made keeping in consideration the capability of silicon wafer and temperatures encountered during electronic packaging, respectively. The results revealed that grain size and porosity reduces while microhardness increases with an increase in compaction pressure. The microhardness obtained at limiting 1 GPa pressure was found to be superior when compared to the published values in open literature. © 2005 Elsevier Ltd. All rights reserved.|
|Source Title:||Microelectronics Reliability|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 28, 2018
WEB OF SCIENCETM
checked on Apr 23, 2018
checked on May 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.