Please use this identifier to cite or link to this item:
|Title:||Third order silicon (SI) nitride side-walled grating using silicon-on-insulator (SOI)||Authors:||Png, C.E.
|Issue Date:||2010||Citation:||Png, C.E.,Lim, S.T.,Li, E.P.,Pan, L.,Danner, A.J. (2010). Third order silicon (SI) nitride side-walled grating using silicon-on-insulator (SOI). 2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010 : 653-654. ScholarBank@NUS Repository. https://doi.org/10.1109/ACP.2010.5682673||Abstract:||We demonstrate three-dimensional simulation of a third order silicon-based grating with full-width-half-maximum (FWHM) reflection bandwidth of 4nm. This provides more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. ©2010 Optical Society of America.||Source Title:||2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010||URI:||http://scholarbank.nus.edu.sg/handle/10635/72018||ISBN:||9781424471119||DOI:||10.1109/ACP.2010.5682673|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 19, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.