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Please use this identifier to cite or link to this item: https://doi.org/10.1109/ACP.2010.5682673
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dc.titleThird order silicon (SI) nitride side-walled grating using silicon-on-insulator (SOI)
dc.contributor.authorPng, C.E.
dc.contributor.authorLim, S.T.
dc.contributor.authorLi, E.P.
dc.contributor.authorPan, L.
dc.contributor.authorDanner, A.J.
dc.date.accessioned2014-06-19T03:30:30Z
dc.date.available2014-06-19T03:30:30Z
dc.date.issued2010
dc.identifier.citationPng, C.E.,Lim, S.T.,Li, E.P.,Pan, L.,Danner, A.J. (2010). Third order silicon (SI) nitride side-walled grating using silicon-on-insulator (SOI). 2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010 : 653-654. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ACP.2010.5682673" target="_blank">https://doi.org/10.1109/ACP.2010.5682673</a>
dc.identifier.isbn9781424471119
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72018
dc.description.abstractWe demonstrate three-dimensional simulation of a third order silicon-based grating with full-width-half-maximum (FWHM) reflection bandwidth of 4nm. This provides more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. ©2010 Optical Society of America.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ACP.2010.5682673
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentINST OF HIGH PERFORMANCE COMPUTING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ACP.2010.5682673
dc.description.sourcetitle2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010
dc.description.page653-654
dc.identifier.isiutNOT_IN_WOS
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