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|Title:||Third order silicon (SI) nitride side-walled grating using silicon-on-insulator (SOI)|
|Citation:||Png, C.E.,Lim, S.T.,Li, E.P.,Pan, L.,Danner, A.J. (2010). Third order silicon (SI) nitride side-walled grating using silicon-on-insulator (SOI). 2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010 : 653-654. ScholarBank@NUS Repository. https://doi.org/10.1109/ACP.2010.5682673|
|Abstract:||We demonstrate three-dimensional simulation of a third order silicon-based grating with full-width-half-maximum (FWHM) reflection bandwidth of 4nm. This provides more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. ©2010 Optical Society of America.|
|Source Title:||2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010|
|Appears in Collections:||Staff Publications|
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