Please use this identifier to cite or link to this item: https://doi.org/10.1109/ACP.2010.5682673
Title: Third order silicon (SI) nitride side-walled grating using silicon-on-insulator (SOI)
Authors: Png, C.E.
Lim, S.T.
Li, E.P.
Pan, L. 
Danner, A.J. 
Issue Date: 2010
Citation: Png, C.E.,Lim, S.T.,Li, E.P.,Pan, L.,Danner, A.J. (2010). Third order silicon (SI) nitride side-walled grating using silicon-on-insulator (SOI). 2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010 : 653-654. ScholarBank@NUS Repository. https://doi.org/10.1109/ACP.2010.5682673
Abstract: We demonstrate three-dimensional simulation of a third order silicon-based grating with full-width-half-maximum (FWHM) reflection bandwidth of 4nm. This provides more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. ©2010 Optical Society of America.
Source Title: 2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010
URI: http://scholarbank.nus.edu.sg/handle/10635/72018
ISBN: 9781424471119
DOI: 10.1109/ACP.2010.5682673
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