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https://doi.org/10.1016/S0038-1101(03)00184-9
| Title: | Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors | Authors: | Tian, Y. Chua, S.-J. Wang, H. |
Keywords: | Dark current GaN MSM photodetector Photocurrent and frequency response |
Issue Date: | Oct-2003 | Citation: | Tian, Y., Chua, S.-J., Wang, H. (2003-10). Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors. Solid-State Electronics 47 (10) : 1863-1867. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(03)00184-9 | Abstract: | In this paper, the performance of GaN metal-semiconductor-metal (MSM) photodetectors is analyzed based on the active layer parameters. The calculated results show the dependence of dark current on carrier concentration for n- and p-type active layers in GaN MSM structures. It is found that the increase in the finger spacing and layer thickness in the MSM structures increase the steady-state photocurrent but do not show strong influence on the transient photocurrent response. © 2003 Elsevier Ltd. All rights reserved. | Source Title: | Solid-State Electronics | URI: | http://scholarbank.nus.edu.sg/handle/10635/72007 | ISSN: | 00381101 | DOI: | 10.1016/S0038-1101(03)00184-9 |
| Appears in Collections: | Staff Publications |
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