Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(03)00184-9
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dc.titleTheoretical study of characteristics in GaN metal-semiconductor-metal photodetectors
dc.contributor.authorTian, Y.
dc.contributor.authorChua, S.-J.
dc.contributor.authorWang, H.
dc.date.accessioned2014-06-19T03:30:23Z
dc.date.available2014-06-19T03:30:23Z
dc.date.issued2003-10
dc.identifier.citationTian, Y., Chua, S.-J., Wang, H. (2003-10). Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors. Solid-State Electronics 47 (10) : 1863-1867. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(03)00184-9
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72007
dc.description.abstractIn this paper, the performance of GaN metal-semiconductor-metal (MSM) photodetectors is analyzed based on the active layer parameters. The calculated results show the dependence of dark current on carrier concentration for n- and p-type active layers in GaN MSM structures. It is found that the increase in the finger spacing and layer thickness in the MSM structures increase the steady-state photocurrent but do not show strong influence on the transient photocurrent response. © 2003 Elsevier Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0038-1101(03)00184-9
dc.sourceScopus
dc.subjectDark current
dc.subjectGaN
dc.subjectMSM photodetector
dc.subjectPhotocurrent and frequency response
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S0038-1101(03)00184-9
dc.description.sourcetitleSolid-State Electronics
dc.description.volume47
dc.description.issue10
dc.description.page1863-1867
dc.description.codenSSELA
dc.identifier.isiut000185129400044
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