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|Title:||Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors|
|Authors:||Tian, Y. |
Photocurrent and frequency response
|Citation:||Tian, Y., Chua, S.-J., Wang, H. (2003-10). Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors. Solid-State Electronics 47 (10) : 1863-1867. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(03)00184-9|
|Abstract:||In this paper, the performance of GaN metal-semiconductor-metal (MSM) photodetectors is analyzed based on the active layer parameters. The calculated results show the dependence of dark current on carrier concentration for n- and p-type active layers in GaN MSM structures. It is found that the increase in the finger spacing and layer thickness in the MSM structures increase the steady-state photocurrent but do not show strong influence on the transient photocurrent response. © 2003 Elsevier Ltd. All rights reserved.|
|Source Title:||Solid-State Electronics|
|Appears in Collections:||Staff Publications|
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