Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(03)00184-9
Title: Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors
Authors: Tian, Y. 
Chua, S.-J. 
Wang, H.
Keywords: Dark current
GaN
MSM photodetector
Photocurrent and frequency response
Issue Date: Oct-2003
Source: Tian, Y., Chua, S.-J., Wang, H. (2003-10). Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors. Solid-State Electronics 47 (10) : 1863-1867. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(03)00184-9
Abstract: In this paper, the performance of GaN metal-semiconductor-metal (MSM) photodetectors is analyzed based on the active layer parameters. The calculated results show the dependence of dark current on carrier concentration for n- and p-type active layers in GaN MSM structures. It is found that the increase in the finger spacing and layer thickness in the MSM structures increase the steady-state photocurrent but do not show strong influence on the transient photocurrent response. © 2003 Elsevier Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/72007
ISSN: 00381101
DOI: 10.1016/S0038-1101(03)00184-9
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