Please use this identifier to cite or link to this item:
|Title:||Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors|
|Authors:||Tian, Y. |
Photocurrent and frequency response
|Citation:||Tian, Y., Chua, S.-J., Wang, H. (2003-10). Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors. Solid-State Electronics 47 (10) : 1863-1867. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(03)00184-9|
|Abstract:||In this paper, the performance of GaN metal-semiconductor-metal (MSM) photodetectors is analyzed based on the active layer parameters. The calculated results show the dependence of dark current on carrier concentration for n- and p-type active layers in GaN MSM structures. It is found that the increase in the finger spacing and layer thickness in the MSM structures increase the steady-state photocurrent but do not show strong influence on the transient photocurrent response. © 2003 Elsevier Ltd. All rights reserved.|
|Source Title:||Solid-State Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 17, 2019
WEB OF SCIENCETM
checked on Mar 6, 2019
checked on Feb 9, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.