Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate

Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICIMW.2010.5612488

Title:	Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate
Authors:	Zhang, L. Teng, J.H. Tanoto, H. Yew, Y. Deng, L.Y. Chua, S.J.
Issue Date:	2010
Citation:	Zhang, L.,Teng, J.H.,Tanoto, H.,Yew, Y.,Deng, L.Y.,Chua, S.J. (2010). Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate. IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ICIMW.2010.5612488
Abstract:	Terahertz wire-grid polarizer with 500nm grating period on high resistivity silicon (100) is fabricated using nanoimprinting lithography (NIL). Preliminary results show a good polarization characteristic ranging from 0.5 to 5 THz. The method is high throughput and low cost. © 2010 IEEE.
Source Title:	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
URI:	http://scholarbank.nus.edu.sg/handle/10635/71957
ISBN:	9781424466573
DOI:	10.1109/ICIMW.2010.5612488
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check