Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICIMW.2010.5612488
Title: Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate
Authors: Zhang, L.
Teng, J.H.
Tanoto, H.
Yew, Y.
Deng, L.Y.
Chua, S.J. 
Issue Date: 2010
Citation: Zhang, L.,Teng, J.H.,Tanoto, H.,Yew, Y.,Deng, L.Y.,Chua, S.J. (2010). Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate. IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ICIMW.2010.5612488
Abstract: Terahertz wire-grid polarizer with 500nm grating period on high resistivity silicon (100) is fabricated using nanoimprinting lithography (NIL). Preliminary results show a good polarization characteristic ranging from 0.5 to 5 THz. The method is high throughput and low cost. © 2010 IEEE.
Source Title: IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
URI: http://scholarbank.nus.edu.sg/handle/10635/71957
ISBN: 9781424466573
DOI: 10.1109/ICIMW.2010.5612488
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