Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ICIMW.2010.5612488
DC Field | Value | |
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dc.title | Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate | |
dc.contributor.author | Zhang, L. | |
dc.contributor.author | Teng, J.H. | |
dc.contributor.author | Tanoto, H. | |
dc.contributor.author | Yew, Y. | |
dc.contributor.author | Deng, L.Y. | |
dc.contributor.author | Chua, S.J. | |
dc.date.accessioned | 2014-06-19T03:29:48Z | |
dc.date.available | 2014-06-19T03:29:48Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Zhang, L.,Teng, J.H.,Tanoto, H.,Yew, Y.,Deng, L.Y.,Chua, S.J. (2010). Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate. IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICIMW.2010.5612488" target="_blank">https://doi.org/10.1109/ICIMW.2010.5612488</a> | |
dc.identifier.isbn | 9781424466573 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/71957 | |
dc.description.abstract | Terahertz wire-grid polarizer with 500nm grating period on high resistivity silicon (100) is fabricated using nanoimprinting lithography (NIL). Preliminary results show a good polarization characteristic ranging from 0.5 to 5 THz. The method is high throughput and low cost. © 2010 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ICIMW.2010.5612488 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/ICIMW.2010.5612488 | |
dc.description.sourcetitle | IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide | |
dc.description.page | - | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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