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|Title:||Spin-polarized transport through GaAs/AlGaAs parabolic quantum well under a uniform magnetic field||Authors:||Wan, F.
|Issue Date:||Feb-2009||Citation:||Wan, F.,Jalil, M.B.A.,Tan, S.G.,Fujita, T. (2009-02). Spin-polarized transport through GaAs/AlGaAs parabolic quantum well under a uniform magnetic field. International Journal of Nanoscience 8 (1-2) : 71-74. ScholarBank@NUS Repository.||Abstract:||We present a GaAs/AlGaAs-based quantum well device capable of achieving an appreciable spin polarization coupled with high electron transmission. Our numerical results indicate that the device is able to achieve a high spin polarization without the need for less commonly used materials with high g-factors required by previously proposed semiconductor-based systems. The electron transmission and spin polarization amplitude of our structure is found to be robust to the length of the parabolic well, which could ease the fabrication of such structures in practical applications. © 2009 World Scientific Publishing Company.||Source Title:||International Journal of Nanoscience||URI:||http://scholarbank.nus.edu.sg/handle/10635/71849||ISSN:||0219581X|
|Appears in Collections:||Staff Publications|
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