Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/71849
Title: Spin-polarized transport through GaAs/AlGaAs parabolic quantum well under a uniform magnetic field
Authors: Wan, F.
Jalil, M.B.A. 
Tan, S.G.
Fujita, T. 
Keywords: Landau levels
Quantum wells
Spin polarization
Spin transport
Spintronics
Issue Date: Feb-2009
Source: Wan, F.,Jalil, M.B.A.,Tan, S.G.,Fujita, T. (2009-02). Spin-polarized transport through GaAs/AlGaAs parabolic quantum well under a uniform magnetic field. International Journal of Nanoscience 8 (1-2) : 71-74. ScholarBank@NUS Repository.
Abstract: We present a GaAs/AlGaAs-based quantum well device capable of achieving an appreciable spin polarization coupled with high electron transmission. Our numerical results indicate that the device is able to achieve a high spin polarization without the need for less commonly used materials with high g-factors required by previously proposed semiconductor-based systems. The electron transmission and spin polarization amplitude of our structure is found to be robust to the length of the parabolic well, which could ease the fabrication of such structures in practical applications. © 2009 World Scientific Publishing Company.
Source Title: International Journal of Nanoscience
URI: http://scholarbank.nus.edu.sg/handle/10635/71849
ISSN: 0219581X
Appears in Collections:Staff Publications

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