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|Title:||Investigation of tunnel-regenerated multi-active-region light-emitting diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM)||Authors:||Lee, T.H.
|Issue Date:||Sep-2002||Citation:||Lee, T.H.,Guo, X.,Shen, G.D.,Ji, Y.,Wang, G.H.,Du, J.Y.,Wang, X.Z.,Gao, G.,Altes, A.,Balk, Lj.,Phang, J.C.H. (2002-09). Investigation of tunnel-regenerated multi-active-region light-emitting diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM). Microelectronics Reliability 42 (9-11) : 1711-1714. ScholarBank@NUS Repository.||Abstract:||Scanning Thermal Microscopy (SThM) has been used to map the temperature distribution of two light-emitting regions of a tunnel-regenerated multi-active region (TRMAR) light-emitting diode (LED). These LEDs have a high brightness and quantum efficiency. The temperature profile obtained corresponds to the active regions, where both radiative and non-radiative recombination occur. The heating was found to be higher with low current, which is consistent with the analysis of the linear relation between brightness and current. It was further observed that the reverse tunnel junction has slight temperature rise due to higher resistance at low bias and the current spreading effect. © 2002 Elsevier Science Ltd. All rights reserved.||Source Title:||Microelectronics Reliability||URI:||http://scholarbank.nus.edu.sg/handle/10635/70690||ISSN:||00262714|
|Appears in Collections:||Staff Publications|
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