Experimental characterisation of on-chip octagonal double-helix inductors on silicon substrates

Abstract

Experimental characterisation of on-chip octagonal double-helix inductors on silicon substrates is performed. These symmetrical inductors are respectively fabricated with different turn numbers, inner first turn lengths and total strip lengths, but with the same strip width and spacing. Measurement and simulation for the two-port S-parameters are performed, and in order to eliminate the pad-probe effects, the de-embedding technique is used. Further, the inductance, parasitic capacitances, self-resonance frequency and frequency corresponding to the maximum Q-factor are extracted and analysed.