Please use this identifier to cite or link to this item: https://doi.org/10.1049/ip-map:20030474
Title: Experimental characterisation of on-chip octagonal double-helix inductors on silicon substrates
Authors: Yin, W.Y. 
Pan, S.J.
Li, L.W. 
Issue Date: Aug-2003
Source: Yin, W.Y., Pan, S.J., Li, L.W. (2003-08). Experimental characterisation of on-chip octagonal double-helix inductors on silicon substrates. IEE Proceedings: Microwaves, Antennas and Propagation 150 (4) : 265-268. ScholarBank@NUS Repository. https://doi.org/10.1049/ip-map:20030474
Abstract: Experimental characterisation of on-chip octagonal double-helix inductors on silicon substrates is performed. These symmetrical inductors are respectively fabricated with different turn numbers, inner first turn lengths and total strip lengths, but with the same strip width and spacing. Measurement and simulation for the two-port S-parameters are performed, and in order to eliminate the pad-probe effects, the de-embedding technique is used. Further, the inductance, parasitic capacitances, self-resonance frequency and frequency corresponding to the maximum Q-factor are extracted and analysed.
Source Title: IEE Proceedings: Microwaves, Antennas and Propagation
URI: http://scholarbank.nus.edu.sg/handle/10635/70241
ISSN: 13502417
DOI: 10.1049/ip-map:20030474
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