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https://scholarbank.nus.edu.sg/handle/10635/68793
| Title: | A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices | Authors: | Chen, B. Ooi, B.L. Kooi, P.S. |
Keywords: | Bipolar Transistor HBT Parameter Extraction Thermal Resistance |
Issue Date: | 2004 | Citation: | Chen, B.,Ooi, B.L.,Kooi, P.S. (2004). A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices. 2004 9th IEEE Singapore International Conference on Communication Systems, ICCS : 588-591. ScholarBank@NUS Repository. | Abstract: | A simple, robust but accurate method to extract the thermal resistance of BJT/HBT devices is proposed. It only needs the measured device DC I-V BJT/HBT devices, GaAs HBT, silicon BIT and SiGe HBTs. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method. | Source Title: | 2004 9th IEEE Singapore International Conference on Communication Systems, ICCS | URI: | http://scholarbank.nus.edu.sg/handle/10635/68793 | ISBN: | 0780385497 |
| Appears in Collections: | Staff Publications |
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