Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/68793
Title: A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices
Authors: Chen, B. 
Ooi, B.L. 
Kooi, P.S. 
Keywords: Bipolar Transistor
HBT
Parameter Extraction
Thermal Resistance
Issue Date: 2004
Source: Chen, B.,Ooi, B.L.,Kooi, P.S. (2004). A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices. 2004 9th IEEE Singapore International Conference on Communication Systems, ICCS : 588-591. ScholarBank@NUS Repository.
Abstract: A simple, robust but accurate method to extract the thermal resistance of BJT/HBT devices is proposed. It only needs the measured device DC I-V BJT/HBT devices, GaAs HBT, silicon BIT and SiGe HBTs. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method.
Source Title: 2004 9th IEEE Singapore International Conference on Communication Systems, ICCS
URI: http://scholarbank.nus.edu.sg/handle/10635/68793
ISBN: 0780385497
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

22
checked on Dec 9, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.