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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/68793
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dc.titleA fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices
dc.contributor.authorChen, B.
dc.contributor.authorOoi, B.L.
dc.contributor.authorKooi, P.S.
dc.date.accessioned2014-06-19T02:53:18Z
dc.date.available2014-06-19T02:53:18Z
dc.date.issued2004
dc.identifier.citationChen, B.,Ooi, B.L.,Kooi, P.S. (2004). A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices. 2004 9th IEEE Singapore International Conference on Communication Systems, ICCS : 588-591. ScholarBank@NUS Repository.
dc.identifier.isbn0780385497
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/68793
dc.description.abstractA simple, robust but accurate method to extract the thermal resistance of BJT/HBT devices is proposed. It only needs the measured device DC I-V BJT/HBT devices, GaAs HBT, silicon BIT and SiGe HBTs. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method.
dc.sourceScopus
dc.subjectBipolar Transistor
dc.subjectHBT
dc.subjectParameter Extraction
dc.subjectThermal Resistance
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitle2004 9th IEEE Singapore International Conference on Communication Systems, ICCS
dc.description.page588-591
dc.identifier.isiutNOT_IN_WOS
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